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NXP Semiconductors
10. Dynamic characteristics
10.1 Flash memory
Table 10. Flash characteristics
T amb = ? 40 ° C to +85 ° C, unless otherwise specified.
LPC1111/12/13/14
Symbol
N endu
t ret
Parameter
endurance
retention time
Conditions
powered
unpowered
[1]
Min
10000
10
20
Typ
-
-
-
Max
-
-
-
Unit
cycles
years
years
[1]
Number of program/erase cycles.
10.2 External clock
Table 11. Dynamic characteristic: external clock
T amb = ? 40 ° C to +85 ° C; V DD(3V3) over specified ranges. [1]
Symbol
f osc
T cy(clk)
t CHCX
t CLCX
t CLCH
t CHCL
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Conditions
Min
1
40
T cy(clk) × 0.4
T cy(clk) × 0.4
-
-
Typ [2]
-
-
-
-
-
-
Max
25
1000
-
-
5
5
Unit
MHz
ns
ns
ns
ns
ns
[1]
[2]
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 ° C), nominal supply voltages.
t CHCX
t CHCL
t CLCX
t CLCH
T cy(clk)
002aaa907
Fig 17. External clock timing (with an amplitude of at least V i(RMS) = 200 mV)
LPC1111_12_13_14_0
? NXP B.V. 2009. All rights reserved.
Objective data sheet
Rev. 00.11 — 13 November 2009
39 of 53
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